GaN Epitaxial Wafers-Based Product Demand Continues to Grow

GaN Epitaxial Wafers

Gan Epitaxial Wafers are an essential ingredient for next-generation HEMT devices. They can enable the creation of high-frequency and high power devices that exceed the limitations of traditional silicon-based electronics. These devices have a wide range of applications including radio frequency, light-emitting diode (LED) and power electronics. The demand for GaN-based products is expected to increase significantly in the coming years as these devices are capable of operating at very high frequencies and temperatures.

GaN Epitaxial Wafers are available in a variety of sizes and formats to suit different device requirements. They are produced at multiple production facilities across the world and are suitable for applications such as power, RF and CMOS devices. TDI, a leading producer of GaN epitaxial wafers, has expanded its R&D and manufacturing operations to a new 3,200m2 facility in Silver Spring, Maryland. The new facility offers expanded space for crystal growth and epitaxial deposition as well as material characterization.

Moreover, the new fab will also feature an automated production line to support the company's True Bulk GaN technology. This is a unique substrate based on a novel template synthesis process that allows a large substrate area to be grown with a small footprint and low defect density.

To further improve efficiency and reduce energy consumption, the company uses an artificial intelligence-based production platform that controls crystal growth in real time at atomic layer level. The system also monitors the crystal growth state and learns how to maximize productivity from its monitoring data sets.

Currently, the majority of Gan Epitaxial Wafers on the market are based on sapphire substrates. This is because sapphire is inexpensive and relatively easy to source, however, it can cause wafer bowing which can negatively impact the performance of GaN-based devices due to the mismatch in thermal expansion coefficient between the GaN epitaxial layer and the sapphire substrate

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